IRFZ44N Hoja de datos ( Datasheet PDF ) NChannel MOSFET Transistor
Fet Data Sheet. This n−channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, dmos technology. Ordering information j11x = device code x = 1 or 2 a = assembly location y = year ww = work week = pb−free package.
IRFZ44N Hoja de datos ( Datasheet PDF ) NChannel MOSFET Transistor
This n−channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, dmos technology. Low rds(on) high current capability. Ordering information j11x = device code x = 1 or 2 a = assembly location y = year ww = work week = pb−free package. Web dimensions section on page 2 of this data sheet. As with other device data sheets, a device type number and brief description is usually. Web microchip’s vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input. These devices are pb−free, halogen free and are rohs compliant nvb prefix for automotive.
Ordering information j11x = device code x = 1 or 2 a = assembly location y = year ww = work week = pb−free package. This n−channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, dmos technology. Low rds(on) high current capability. Web microchip’s vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input. Web dimensions section on page 2 of this data sheet. These devices are pb−free, halogen free and are rohs compliant nvb prefix for automotive. Ordering information j11x = device code x = 1 or 2 a = assembly location y = year ww = work week = pb−free package. As with other device data sheets, a device type number and brief description is usually.
